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NCV57081C

NCV57081C is Isolated High Current IGBT Gate Driver manufactured by onsemi.
NCV57081C datasheet preview

NCV57081C Datasheet

Part number NCV57081C
Datasheet NCV57081C / NCV57080A Datasheet PDF (Download)
File Size 1.15 MB
Manufacturer onsemi
Description Isolated High Current IGBT Gate Driver
NCV57081C page 2 NCV57081C page 3

NCV57081C Overview

Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y (x = D or V, y = A, B or C) NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept plementary inputs and depending on the , offer options such as Active Miller Clamp (version A),...

NCV57081C Key Features

  • High Peak Output Current (+6.5 A/-6.5 A)
  • Low Clamp Voltage Drop Eliminates the Need of Negative Power
  • Short Propagation Delays with Accurate Matching
  • IGBT/MOSFET Gate Clamping during Short Circuit
  • IGBT/MOSFET Gate Active Pull Down
  • Tight UVLO Thresholds for Bias Flexibility
  • Wide Bias Voltage Range including Negative VEE2 (Version B)
  • 3.3 V, 5 V, and 15 V Logic Input
  • 3.75 kVRMS VISO (I-O) (to meet UL1577 Requirements)
  • Safety and Regulatory Approvals

Related Datasheets

Part Number Description Manufacturer
NCV57081A Isolated High Current IGBT Gate Driver ON Semiconductor
NCV57081B Isolated High Current IGBT Gate Driver ON Semiconductor
NCV57080A Isolated High Current IGBT Gate Driver ON Semiconductor

NCV57081C Distributor

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