NCP81232
Features
- Vin = 4.5~20 V with Input Feedforward
- Integrated 5.35 V LDO
- Vout = 0.6 V ~ 5.3 V
- Fsw = 200k ~ 1.2 MHz
- PWM Output patible to 3.3 V and 5 V Dr MOS
- Flexible 8 binations of Power Stage Configurations (1~2 Output
Rails, 1~4 Phases)
- DDR Power Mode Option
- Interleaved Operation
- Differential Output Voltage Sense
- Differential Current Sense patible for both Inductor DCR Sense and Dr MOS Iout
- 2 Enables with Programmable Input UVLO
- Programmable Dr MOS Power Ready Detection (DRVON)
- 2 Power Good Indicators
- prehensive Fault Indicator
- Externally Programmable Soft Start and Delay Time
- Programmable Hiccup Over Current Protection
- Hiccup Under Voltage Protection
- Recoverable Over Voltage Protection
- Hiccup Over Temperature Protection
- Thermal Shutdown Protection
- QFN- 40, 5x5 mm, 0.4 mm Pitch Package
- This is a Pb- Free Device
Typical Applications
- Tele Applications
- Server and Storage System
- Multiple Rail Systems
- DDR Applications
.onsemi.
1 40
QFN40 CASE...
