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N02L63W2A - Ultra-Low Power Asynchronous CMOS SRAM

Description

Rev.

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable acces.

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Datasheet Details

Part number N02L63W2A
Manufacturer onsemi
File Size 242.39 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N02L63W2A Datasheet

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Full PDF Text Transcription

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N02L63W2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit Overview The N02L63W2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N02L63W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.
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