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MPSA42, MPSA43
High Voltage Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
MPSA43 MPSA42
VCEO
200 300
Vdc
Collector −Base Voltage
MPSA43 MPSA42
VCBO
200 300
Vdc
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
6.0 Vdc 500 mAdc
625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 1.5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device.
MPSA43 Datasheet
