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  ON Semiconductor Electronic Components Datasheet  

MPSA42 Datasheet

High Voltage Transistors

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MPSA42, MPSA43
High Voltage Transistors
NPN Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
MPSA43
MPSA42
VCEO
200
300
Vdc
Collector Base Voltage
MPSA43
MPSA42
VCBO
200
300
Vdc
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VEBO
IC
PD
6.0 Vdc
500 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoAmbient
RqJA
200 °C/W
Thermal Resistance,
JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
12 3
TO92
(TO226AA)
CASE 2911
BENT LEAD
MARKING DIAGRAM
MPS
A4x
AYWWG
G
x = 2 or 3
A = Assembly Location
Y = Year
WW =
Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
February, 2013 Rev. 8
1
Publication Order Number:
MPSA42/D


  ON Semiconductor Electronic Components Datasheet  

MPSA42 Datasheet

High Voltage Transistors

No Preview Available !

MPSA42, MPSA43
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
MPSA42
MPSA43
Collector Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSA42
MPSA43
Emitter Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
MPSA42
MPSA43
MPSA42
MPSA43
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
Collector Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MPSA42
MPSA43
BaseEmitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
MPSA42
MPSA43
Symbol
Min Max Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Vdc
300
200
Vdc
300
200
6.0 Vdc
mAdc
0.1
0.1
mAdc
0.1
0.1
hFE
VCE(sat)
VBE(sat)
25
40
40
Vdc
0.5
0.4
0.9 Vdc
fT 50 MHz
Ccb pF
3.0
4.0
http://onsemi.com
2


Part Number MPSA42
Description High Voltage Transistors
Maker ON Semiconductor
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MPSA42 Datasheet PDF






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