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  ON Semiconductor Electronic Components Datasheet  

MMSF1308R2 Datasheet

Power MOSFET

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MMSF1308
Preferred Device
Power MOSFET
7 Amps, 30 Volts
NChannel SO8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. MiniMOSt devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dcdc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
High Speed Switching Provides High Efficiency for DC/DC
Converter
Miniature SO8 Surface Mount Package Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Max
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MΩ)
GatetoSource Voltage Continuous
Continuous Drain Current @ TA = 25°C
(Note 1.)
Pulsed Drain Current (Note 2.)
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
ID
IDM
PD
30
30
± 20
7.0
50
2.5
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
Unit
Vdc
Vdc
Vdc
Adc
W
°C
THERMAL RESISTANCE
JunctiontoAmbient (Note 1.)
RθJA
50 °C/W
1. When mounted on 1square FR4 or G10 board
(VGS = 10 V, @ 10 Seconds)
2. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
7 AMPERES
30 VOLTS
RDS(on) = 30 mW
NChannel
D
G
S
MARKING
DIAGRAM
SO8
8
CASE 751
STYLE 12
1
S1308
LYWW
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF1308R2
SO8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MMSF1308/D


  ON Semiconductor Electronic Components Datasheet  

MMSF1308R2 Datasheet

Power MOSFET

No Preview Available !

MMSF1308
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 7.0 Adc)
(VGS = 4.5 Vdc, ID = 3.5 Adc)
Forward Transconductance (VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 21 Vdc, ID = 7.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω) (Note 1)
Gate Charge
(VDS = 15 Vdc, ID = 7.0 Adc,
VGS = 10 Vdc) (Note 1)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 7.0 Adc, VGS = 0 Vdc) (Note 1)
(IS = 7.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs) (Note 1)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperatures.
3. Reflects typical values. Cpk =
Max limit Typ
3 x SIGMA
4. Repetitive rating; pulse width limited by maximum junction temperature.
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
30
1.0
Typ
30
1.6
4.3
22
30
4.5
690
290
90
7.5
24
30
46
20
2.5
6.0
8.0
0.85
0.71
35
20
15
0.03
Max Unit
Vdc
mV/°C
μAdc
1.0
10
100 nAdc
Vdc
2.5
mV/°C
mΩ
30
39
Mhos
970 pF
410
130
15 ns
48
60
92
30 nC
Vdc
1.0
ns
μC
http://onsemi.com
2


Part Number MMSF1308R2
Description Power MOSFET
Maker ON Semiconductor
Total Page 9 Pages
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