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MMDL770T1 Datasheet

Schottky Barrier Diode

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MMDL770T1
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
Extremely Low Minority Carrier Lifetime
Very Low Capacitance – 1.0 pF @ 20 V
Low Reverse Leakage – 200 nA (max)
High Reverse Voltage – 70 Volts (min)
Available in 8 mm Tape and Reel
Device Marking: 5H
http://onsemi.com
1.0 pF SCHOTTKY
BARRIER DIODE
MAXIMUM RATINGS
Symbol
Rating
VR Reverse Voltage
THERMAL CHARACTERISTICS
Symbol
Characteristic
PD Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
RqJA
TJ, Tstg
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Value
70
Unit
Vdc
Max Unit
200 mW
1.57 mW/°C
635 °C/W
–55 to
+150
°C
1
2
PLASTIC
SOD–323
CASE 477
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMDL770T1 SOD–323 3000 / Tape & Reel
© Semiconductor Components Industries, LLC, 2001
January, 2000 – Rev. 0
1
Publication Order Number:
MMDL770T1/D
Free Datasheet http://www.datasheet4u.com/


  ON Semiconductor Electronic Components Datasheet  

MMDL770T1 Datasheet

Schottky Barrier Diode

No Preview Available !

MMDL770T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 µA)
V(BR)R
70
Volts
Diode Capacitance
(VR = 20 Volts, f = 1.0 MHZ)
CT pF
– 0.5 1.0
Reverse Leakage
(VR = 35 V)
IR nAdc
– 9.0 200
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
VF Vdc
– 0.7 1.0
2.0
MMBD770T1
1.6
1.2
TYPICAL CHARACTERISTICS
f = 1.0 MHz
500
MMBD770T1
400
KRAKAUER METHOD
300
0.8 200
0.4 100
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
MMBD770T1
1.0 TA = 100°C
TA = 75°C
0.1
0.01
0.001
0
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
100
MMBD770T1
10
TA = 85°C
TA = -ā40°C
1.0
TA = 25°C
0.1
50 0.2 0.4 0.8 1.2 1.6
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
2.0
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/


Part Number MMDL770T1
Description Schottky Barrier Diode
Maker ON Semiconductor
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MMDL770T1 Datasheet PDF






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