MMDL770T1
MMDL770T1 Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high- efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.
- -
- -
- -
Extremely Low Minority Carrier Lifetime Very Low Capacitance
- 1.0 p F @ 20 V Low Reverse Leakage
- 200 n A (max) High Reverse Voltage
- 70 Volts (min) Available in 8 mm Tape and Reel Device Marking: 5H http://onsemi.
1.0 p F SCHOTTKY BARRIER DIODE
MAXIMUM RATINGS
Symbol VR Reverse Voltage Rating Value 70 Unit Vdc
1 2
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635
- 55 to +150 Unit m W m W/°C °C/W °C
PLASTIC SOD- 323 CASE 477
Rq JA TJ, Tstg
- FR- 5 Minimum Pad
1 CATHODE
2 ANODE
ORDERING INFORMATION
Device MMDL770T1 Package SOD- 323 Shipping 3000 / Tape & Reel
© Semiconductor ponents Industries, LLC,...
