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MMDL770T1 Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.
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Extremely Low Minority Carrier Lifetime Very Low Capacitance – 1.0 pF @ 20 V Low Reverse Leakage – 200 nA (max) High Reverse Voltage – 70 Volts (min) Available in 8 mm Tape and Reel Device Marking: 5H
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1.0 pF SCHOTTKY BARRIER DIODE
MAXIMUM RATINGS
Symbol VR Reverse Voltage Rating Value 70 Unit Vdc
1 2
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.
MMDL770T1 Datasheet
