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  ON Semiconductor Electronic Components Datasheet  

MMBTH10-4L Datasheet

VHF/UHF Transistor

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MMBTH10L,
MMBTH10-4L,
SMMBTH10-4L,
NSVMMBTH10L
VHF/UHF Transistor
NPN Silicon
Features
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25 Vdc
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCBO
VEBO
30 Vdc
3.0 Vdc
Characteristic
Symbol
Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RθJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction to Ambient (Note 2)
RθJA
417 °C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
www.onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAMS
3EM MG
G
3E4 MG
G
MMBTH10LT1G,
NSVMMBTH10LT1G
MMBTH10−04LT1G
3EM, 3E4 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBTH10LT1G
Package
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
NSVMMBTH10LT1G SOT−23
3,000 /
(Pb−Free) Tape & Reel
MMBTH10−4LT1G
SOT−23
3,000 /
(Pb−Free) Tape & Reel
MMBTH10LT3G,
SMMBTH10−4LT3G
SOT−23
10,000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 6
1
Publication Order Number:
MMBTH10LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBTH10-4L Datasheet

VHF/UHF Transistor

No Preview Available !

MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 100 μAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 μAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
V(BR)CEO
25
Vdc
V(BR)CBO
30
Vdc
V(BR)EBO
3.0
Vdc
ICBO
nAdc
− 100
IEBO
nAdc
− 100
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc)
MMBTH10LT1G, NSVMMBTH10LT1G
MMBTH10−4LT1G, SMMBTH10−4LT3G
hFE
60 −
120 − 240
Collector−Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc)
Base−Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VCE(sat)
VBE
Vdc
− 0.5
Vdc
− 0.95
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 Mhz)
MMBTH10LT1G, NSVMMBTH10LT1G
MMBTH10−4LT1G, SMMBTH10−4LT3G
fT
650 −
800 −
MHz
Collector−Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
pF
− 0.7
Common−Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Crb
pF
− 0.65
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
rbCc
ps
− 9.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number MMBTH10-4L
Description VHF/UHF Transistor
Maker ON Semiconductor
Total Page 5 Pages
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