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JFET Transistor
N-Channel
MMBFU310LT1G
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDS
25
Vdc
Gate−Source Voltage
VGS
25
Vdc
Gate Current
IG
10
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR− 5 = 1.0 0.75 0.062 in.
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
TJ, Tstg − 55 to +150 °C
DATA SHEET www.onsemi.
MMBFU310LT1G Datasheet
