MMBD353LT1G Datasheet | onsemi

Features - Very Low Capacitance - Less Than 1.0 p F @ Zero V - Low Forward Voltage - 0.5 V (Typ) @ IF = 10 m A - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Continuous Reverse Voltage Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C 225 m W 1.8 m W/C Thermal Resistance, Junction- to- Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Rq JA PD C/W 300 m W 2.4 m W/C Thermal Resistance, Junction- to- Ambient Rq JA Junction and Storage Temperature TJ, Tstg 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. - 55 to +150 C/W...