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MMBD352WT1G Datasheet Dual Schottky Barrier Diode

Manufacturer: onsemi

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Datasheet Details

Part number MMBD352WT1G
Manufacturer onsemi
File Size 113.12 KB
Description Dual Schottky Barrier Diode
Datasheet download datasheet MMBD352WT1G Datasheet

Overview

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.

Key Features

  • Very Low Capacitance.
  • Less Than 1.0 pF @ 0 V.
  • Low Forward Voltage.
  • 0.5 V (Typ) @ IF = 10 mA.
  • AEC Qualified and PPAP Capable.
  • NSV Prefix for Automotive and Other.

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