MJE210G transistors equivalent, complementary silicon power plastic transistors.
* High DC Current Gain
* Low Collector−Emitter Saturation Voltage
* High Current−Gain − Bandwidth Product
* Annular Construction for Low Leakage
* The.
Features
* High DC Current Gain
* Low Collector−Emitter Saturation Voltage
* High Current−Gain − Bandwidth .
Image gallery
TAGS
Download (Size : 155.94KB)