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MBR4015LWTG
Switch Mode Schottky Power Rectifier
TO247 Power Package
This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction • Guardring for Overvoltage Protection • Low Forward Voltage Drop • Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating.
MBR4015LWTG Datasheet
