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MBR4015LWT
SWITCHMODEt Schottky Power Rectifier
TO247 Power Package
This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction
• Guardring for Overvoltage Protection
• Low Forward Voltage Drop
• Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating.
• Full Electrical Isolation without Additional Hardware
• Pb−Free Package is Available*
Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 4.
MBR4015LWT Datasheet
