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MBR340
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
• Extremely Low VF • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Low Stored Charge, Majority Carrier Conduction • Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded • Weight: 1.
MBR340 Datasheet
