* Low Forward Voltage
* Low Power Loss/High Efficiency
* High Surge Capacity
* 150°C Operating Junction Temperature
* 30 A Total (15 A Per Diode Leg) .

Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
* These Devices are Pb−Fr.

MBR30H35CT

MBR30H35PT

MBR30H100C

MBR30H100CT

MBR30H100CTG

MBR30H100MFS

MBR30H100PT

MBR30H150CT

MBR30H150CTG

MBR30H45CT

MBR30H45PT

MBR30H50CT

MBR30H50PT

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts