MBD101G Datasheet | onsemi

Features - Low Noise Figure - 6.0 d B Typ @ 1.0 GHz - Very Low Capacitance - Less Than 1.0 p F - High Forward Conductance - 0.5 V (Typ) @ IF = 10 m A - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation TA = 25C MBD101 MMBD101LT1 280 m W Derate above 25C MBD101 MMBD101LT1 2.2 m W/C Junction Temperature +150 C Storage Temperature Range Tstg - 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max...