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MBD101G Datasheet ON Semiconductor

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ON Semiconductor · MBD101G File Size : 216.60KB · 2 hits

Features and Benefits


 Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
 Very Low Capacitance − Less Than 1.0 pF
 High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR Forward Power Dissipation PF TA = 25C M.

MBD101G MBD101G MBD101G
TAGS
Schottky
Barrier
Diodes
MBD101
MBD101G
MBD101LT1

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