Datasheet4U Logo Datasheet4U.com

MBD101G Schottky Barrier Diodes

MBD101G Description

Schottky Barrier Diodes MBD101G, MMBD101LT1G Designed primarily for UHF mixer applications but suitable also for use in detector and ultra *fa.

MBD101G Features

* Low Noise Figure
* 6.0 dB Typ @ 1.0 GHz
* Very Low Capacitance
* Less Than 1.0 pF
* High Forward Conductance
* 0.5 V (Typ) @ IF = 10 mA
* These Devices are Pb
* Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage

MBD101G Applications

* but suitable also for use in detector and ultra
* fast switching circuits. Supplied in an inexpensive plastic package for low
* cost, high

📥 Download Datasheet

Preview of MBD101G PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • MBD101LT1 - SILICON SCHOTTKY BARRIER DIODES (Motorola)
  • MBD1057-C18 - Planar Back (Tunnel) Diodes (Aeroflex)
  • MBD110DWT1 - Dual SCHOTTKY Barrier Diodes (Leshan Radio Company)
  • MBD2057-C18 - Planar Back (Tunnel) Diodes (Aeroflex)
  • MBD3004SL - HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE (MSV)
  • MBD301 - 30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES (Motorola)
  • MBD3057-C18 - Planar Back (Tunnel) Diodes (Aeroflex)
  • MBD330DWT1 - Dual SCHOTTKY Barrier Diodes (Leshan Radio Company)

📌 All Tags

Schottky Barrier Diodes ON Semiconductor
ON Semiconductor MBD101G-like datasheet