IRFU220B datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V
* Low gate charge ( typical 12 nC)
* Low Crss ( typical 10 pF)
* Fast switching
* 100% avalanche tested
*.

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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