HGTG30N60B3 igbt equivalent, igbt.
of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating.
operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supp.
The HGTG30N60B3 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low co.
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