HGTG27N120BN Datasheet, ON Semiconductor

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal f.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

HGTG27N60C3DR

HGTG27N60C3R

HGTG20N100D2

HGTG20N120

HGTG20N120C3D

HGTG20N120CN

HGTG20N120CND

HGTG20N120E2

HGTG20N50C1D

HGTG20N60A4

HGTG20N60A4D

HGTG20N60B3

HGTG20N60B3D