HGTG20N60B3D
HGTG20N60B3D is N-Channel IGBT manufactured by onsemi.
features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on- state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti- parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Formerly developmental type TA49016.
Features
- 40 A, 600 V at TC = 25°C
- Typical Fall Time 140 ns at 150°C
- Short Circuit Rated
- Low Conduction Loss
- Hyperfast Anti- Parallel Diode
- This is a Pb- Free Device
.onsemi. C
COLLECTOR (BOTTOM
SIDE METAL)
EC G
TO- 247- 3LD SHORT LEAD CASE 340CK JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K G20N60B3D
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
G20N60B3D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor ponents Industries, LLC, 2001
April, 2020
- Rev. 2
Publication Order Number: HGTG20N60B3D/D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol HGTG20N60B3D Unit
Collector to Emitter Voltage
Collector to Gate Voltage, RGE = 1...
