HGTG11N120CND Datasheet, ON Semiconductor

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is th.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

Symbol HGTG11N120CND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 43 A IC110 22 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Volta.

HGTG11N120CN

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