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HGTG10N120BND Datasheet, ON Semiconductor

HGTG10N120BND igbt equivalent, n-channel igbt.

HGTG10N120BND Avg. rating / M : 1.0 rating-111

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HGTG10N120BND Datasheet

Features and benefits

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is th.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

Description

Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A IC110 17 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Volta.

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TAGS

HGTG10N120BND
N-Channel
IGBT
HGTG10N120BN
HGTG11N120CN
HGTG11N120CND
ON Semiconductor

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