HGTG10N120BND igbt equivalent, n-channel igbt.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is th.
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.
Symbol
HGTG10N120BND
Units
Collector to Emitter Voltage
Collector Current Continuous At TC = 25°C At TC = 110°C
BVCES
1200
V
IC25
35
A
IC110
17
A
Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Volta.
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