H11F1M
H11F1M is Photo FET Optocouplers manufactured by onsemi.
Description
The H11FXM series consists of a Gallium- Aluminum- Arsenide
IRED emitting diode coupled to a symmetrical bilateral silicon photo- detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion- free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in- line packages.
Features
- As a Remote Variable Resistor:
- ≤ 100 W to ≥ 300 MW
- ≤15 p F Shunt Capacitance
- ≥100 GW I/O Isolation Resistance
- As an Analog Switch:
- Extremely Low Offset Voltage
- 60 Vpk- pk Signal Capability
- No Charge Injection or Latch- Up
- UL Recognized (File #E90700)
- These are Pb- Free Devices
Application
- As a Remote Variable Resistor:
- Isolated Variable Attenuator
- Automatic Gain Control
- Active Filter Fine Tuning/Band Switching
- As an Analog Switch:
- Isolated Sample and Hold Circuit
- Multiplexed, Optically Isolated A/D Conversion
DATA SHEET .onsemi.
6 1
6 1
PDIP6 8.51x6.35, 2.54P CASE 646BX
PDIP6 8.51x6.35, 2.54P CASE 646BY
6 1
PDIP6 8.51x6.35, 2.54P CASE 646BZ
MARKING DIAGRAM
H11F1 VXYYQ
H11F1 = Specific Device Code
= VDE Mark (Only appears on parts ordered with VDE option
- See order entry table)
= One- Digit Year Code, e.g., “7”
YY = Two Digit Work Week Ranging from “01” to...
