H11F1M - Photo FET Optocouplers

ON Semiconductor

H11F1M Datasheet Preview — Preview of H11F1M PDF

Datasheet Details

Part number	H11F1M
Manufacturer	ON Semiconductor ↗
File Size	328.08 KB
Description	Photo FET Optocouplers
Datasheet	H11F1M-ONSemiconductor.pdf

H11F1M Product details

Description

The H11FXM series consists of a Gallium Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. free control of low level AC and DC analog signals. line packages.

Features

As a Remote Variable Resistor:.
≤ 100 W to ≥ 300 MW.
≤15 pF Shunt Capacitance.
≥100 GW I/O Isolation Resistance.
As an Analog Switch:.
Extremely Low Offset Voltage.
60 Vpk.
pk Signal Capability.
No Charge Injection or Latch.
Up.
UL Recognized (File #E90700).
These are Pb.
Free Devices.

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Published: Sep 26, 2024 |