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FW297 - Power MOSFET

Features

  • Low On-Resistance.
  • 4.0V Drive.
  • ESD Diode-Protected Gate.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP Power Dissipation When mounted on ceramic substrate (2000mm2 × 0.8mm) 1 unit, PW≤10s Total Dissipation When mounted on ceramic substrate (2000mm2 × 0.8mm.

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Datasheet Details

Part number FW297
Manufacturer onsemi
File Size 431.33 KB
Description Power MOSFET
Datasheet download datasheet FW297 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FW297 Power MOSFET 60V, 58mΩ, 4.5A, Dual N-Channel www.onsemi.com Features • Low On-Resistance • 4.0V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP Power Dissipation When mounted on ceramic substrate (2000mm2 × 0.8mm) 1 unit, PW≤10s Total Dissipation When mounted on ceramic substrate (2000mm2 × 0.8mm) , PW≤10s Junction Temperature PD PT Tj Storage Temperature Tstg Value 60 ±20 4.5 18 Unit V V A A 1.8 W 2.
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