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FW216A - N-Channel Power MOSFET

Features

  • ON-resistance Nch : RDS(on)1=49mΩ (typ. ).
  • 4.0V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW.

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Datasheet Details

Part number FW216A
Manufacturer onsemi
File Size 195.85 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FW216A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0176C FW216A N-Channel Power MOSFET 35V, 4.5A, 64mΩ, Dual SOIC8 http://onsemi.com Features • ON-resistance Nch : RDS(on)1=49mΩ (typ.) • 4.0V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Ratings 35 ±20 4.5 18 1.6 2.2 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.
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