* 8 A 900 V, RDS(on) = 1.4 W (Max.) @ VGS = 10 V, ID = 4 A
* Low Gate Charge (Typ. 45 nC)
* Low Crss (Typ. 14 pF)
* 100% Avalanche Tested
* This Devic.

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.

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