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MOSFET – P-Channel, QFET
-200 V, -5.2 A, 690 mW
FQPF7P20
Description This P−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• −5.2 A, −200 V, RDS(on) = 690 mW (Max.) @ VGS = −10 V,
ID = −2.6 A
• Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested
DATA SHEET www.onsemi.
FQPF7P20 Datasheet
