FQPF13N50C mosfet equivalent, n-channel mosfet.
* 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
* Low Gate Charge (Typ. 43 nC)
* Low Crss (Typ. 20 pF)
* 100% Avalanche Tested
D
GDS
TO-.
These N-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor’s
proprietary, planar stripe,
DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide su.
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