Datasheet Details
| Part number | FQP3N50C |
|---|---|
| Manufacturer | onsemi |
| File Size | 0.97 MB |
| Description | 500V N-Channel MOSFET |
| Datasheet |
 FQP3N50C Datasheet
|
|
|
General Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.
Key Features
- 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V.
- Low gate charge ( typical 10 nC ).
- Low Crss ( typical 8.5 pF).
- Fast switching.
- 100 % avalanche tested.
- Improved dv/dt capability.