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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
QFET®
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features
• 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQP3N50C Datasheet
