FQP3N50C Key Features
- 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
- Low gate charge ( typical 10 nC )
- Low Crss ( typical 8.5 pF)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
- Part: FQP3N50C
- Manufacturer: onsemi (official site)
- Size: 0.97 MB
Related onsemi Datasheets
| Part Number | Description |
|---|---|
| FQP3N60C | N-Channel MOSFET |
| FQP13N50C | N-Channel MOSFET |
| FQP17N40 | N-Channel MOSFET |
| FQP17P10 | P-Channel MOSFET |
| FQP27P06 | P-Channel MOSFET |
FQP3N50C Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power...