FQP3N50C Overview
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power...
FQP3N50C Key Features
- 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
- Low gate charge ( typical 10 nC )
- Low Crss ( typical 8.5 pF)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability