FQP13N50C - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FQP13N50C
Manufacturer	ON Semiconductor
File Size	1.02 MB
Description	N-Channel MOSFET
Datasheet	FQP13N50C Datasheet
Additional preview pages of the FQP13N50C datasheet.

Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based o

Features

13 A, 500 V, RDS(on) = 480 mΩ (Max. ) @ VGS = 10 V, ID = 6.5 A.
Low Gate Charge (Typ. 43 nC).
Low Crss (Typ. 20 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25.

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Published: Dec 24, 2018 |