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FQP13N50C Datasheet N-Channel MOSFET

Manufacturer: onsemi

General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

FQP13N50C / FQPF13N50C — N-Channel QFET® MOSFET FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480.

Key Features

  • 13 A, 500 V, RDS(on) = 480 mΩ (Max. ) @ VGS = 10 V, ID = 6.5 A.
  • Low Gate Charge (Typ. 43 nC).
  • Low Crss (Typ. 20 pF).
  • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25.