FQI7N60 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested
* This .

Description

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.

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