FQD9N25 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 7.4 A, 250 V, RDS(on) = 420 mΩ (Max.) @VGS = 10 V, ID = 3.7 A
* Low Gate Charge (Typ. 15.5 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested D G S D.

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.

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