FQD7P20 Overview
This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power...
FQD7P20 Key Features
- 5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V
- Low Gate Charge (Typ. 19 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested
