FQD7P20
Description
This P-Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A
- Low Gate Charge (Typ. 19 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested
