* −5.7 A, −200 V, RDS(on) = 690 mΩ (Max.) @ VGS = −10 V, ID = −2.85 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 25 pF)
* 100% Avalanche Tested ABSO.

Features
* −5.7 A, −200 V, RDS(on) = 690 mΩ (Max.) @ VGS = −10 V, ID = −2.85 A
* Low Gate Charge (Typ. 19 nC) <.

This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.

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