FQD5N60C mosfet equivalent, n-channel mosfet.
* 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 1.4 A
* Low Gate Charge ( Typ. 15 nC)
* Low Crss (Typ. 6.5 pF)
* 100% Avalanche Tested
* RoH.
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.
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