FQD12N20L datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 9.0 A, 200 V, RDS(on) = 280 mW (Max.) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 16 nC)
* Low Crss (Typ. 17 pF)
* 100% Avalanche Tested ABSOLUTE .

Description

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.

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