FQD12N20L Key Features
- 9.0 A, 200 V, RDS(on) = 280 mW (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 16 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
| Manufacturer | Part Number | Description |
|---|---|---|
| FQD12N20L | N-Channel MOSFET | |
| FQD12N20LTM_F085 | 200V Logic Level N-Channel MOSFET | |
| FQD12N20 | 200V N-Channel MOSFET |