FQD12N20L
FQD12N20L is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 9.0 A, 200 V, RDS(on) = 280 m W (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 16 n C)
- Low Crss (Typ. 17 p F)
- 100% Avalanche Tested
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
Rating Unit
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain- Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed (Note 1)
Gate- Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
±20
210 m J
5.5 m J
V/ns
PD Power Dissipation (TA = 25°C)
- Power Dissipation (TC = 25°C)
- Derate Above 25°C
W/°C
TJ, TSTG Operating and Storage Temperature Range
- 55 to +150 °C
TL Maximum Lead Temperature for...
