FQD12N20L
Description
This N-Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 9.0 A, 200 V, RDS(on) = 280 mW (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 16 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
