FQD12N20L
Overview
- 9.0 A, 200 V, RDS(on) = 280 mW (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 16 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
Related Datasheets
- FQD12N20L — Fairchild Semiconductor — N-Channel MOSFET
- FQD12N20LTM_F085 — Fairchild Semiconductor — 200V Logic Level N-Channel MOSFET
- FQD12N20 — Fairchild Semiconductor — 200V N-Channel MOSFET