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FQD12N20L - N-Channel MOSFET

Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Features

  • 9.0 A, 200 V, RDS(on) = 280 mW (Max. ) @ VGS = 10 V, ID = 4.5 A.
  • Low Gate Charge (Typ. 16 nC).
  • Low Crss (Typ. 17 pF).
  • 100% Avalanche Tested.

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Datasheet preview – FQD12N20L

Datasheet Details

Part number FQD12N20L
Manufacturer ON Semiconductor
File Size 289.61 KB
Description N-Channel MOSFET
Datasheet download datasheet FQD12N20L Datasheet
Additional preview pages of the FQD12N20L datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, QFET 200 V, 9.0 A, 280 mW FQD12N20L Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 9.0 A, 200 V, RDS(on) = 280 mW (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 16 nC) • Low Crss (Typ.
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