FQB5N90 mosfet equivalent, n-channel mosfet.
* 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V,
Description
ID = 2.7 A
This N-Channel enhancement mode power MOSFET is
* Low Gate Charge (Typ. 31 nC)
pr.
ID = 2.7 A
This N-Channel enhancement mode power MOSFET is
* Low Gate Charge (Typ. 31 nC)
produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
*
Low Crss (Typ. 13 pF)
technology has been .
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