Datasheet4U Logo Datasheet4U.com

FQA9N90-F109 - N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max. ) @ VGS = 10 V, ID = 4.3 A.
  • Low Gate Charge (Typ. 55 nC).
  • Low Crss (Typ. 25 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQA9N90 900V N-Channel MOSFET Fairchild Semiconductor
FQA9N90C 900V N-Channel MOSFET Fairchild Semiconductor
FQA9N90C_F109 MOSFET Fairchild Semiconductor
FQA9N90_F109 N-Channel QFET MOSFET Fairchild Semiconductor
FQA9N50 500V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FQA9N90C-F109 N-Channel QFET MOSFET
FQA90N15-F109 N-Channel MOSFET
FQA10N80C-F109 N-Channel QFET MOSFET
FQA11N90-F109 N-Channel MOSFET
FQA11N90C-F109 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQA9N90-F109 — N-Channel QFET® MOSFET FQA9N90-F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω Features • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Published: |