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FQA90N15-F109 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 18 mΩ (Max. ) @ VGS = 10 V, ID = 45 A.
  • Low Gate Charge (Typ. 220 nC).
  • Low Crss (Typ. 200 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Memperature Rating.

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FQA90N15-F109 — N-Channel QFET® MOSFET FQA90N15-F109 N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ Features • RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A • Low Gate Charge (Typ. 220 nC) • Low Crss (Typ. 200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Memperature Rating Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.