FQA10N80C-F109 Datasheet | onsemi

Features - 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A - Low Gate Charge (Typ. 44 n C) - Low Crss (Typ. 15 p F) - 100% Avalanche Tested - Ro HS pliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. TO-3PN MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS IDM VGSS EAS IAR EAR dv/dt TJ, TSTG Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25o C) -Continuous (TC = 100o C) - Pulsed Gate to...