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FOD814A - 4-Pin DIP Phototransistor Optocouplers

Download the FOD814A datasheet PDF. This datasheet also covers the FOD814 variant, as both devices belong to the same 4-pin dip phototransistor optocouplers family and are provided as variant models within a single manufacturer datasheet.

General Description

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4 pin dual in

line package.

Key Features

  • AC Input Response (FOD814).
  • Current Transfer Ratio in Selected Groups.
  • FOD814: 20.
  • 300%.
  • FOD814A: 50.
  • 150%.
  • FOD817: 50.
  • 600%.
  • FOD817A: 80.
  • 160%.
  • FOD817B: 130.
  • 260%.
  • FOD817C: 200.
  • 400%.
  • FOD817D: 300.
  • 600%.
  • Minimum BVCEO of 70 V Guaranteed.
  • Safety and Regulatory Approvals.
  • UL1577, 5,000 VACRMS for 1 Minute.
  • DIN EN/IEC60747.
  • 5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FOD814-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FOD814A
Manufacturer onsemi
File Size 383.65 KB
Description 4-Pin DIP Phototransistor Optocouplers
Datasheet download datasheet FOD814A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4-Pin DIP Phototransistor Optocouplers FOD814, FOD817 Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4−pin dual in−line package.