FGY75N60SMD igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A
* High Input Impedance
* Fast Switching: EOFF = 10 mJ/A
* RoHS Compli.
where low conduction and switching losses are essential.
Features
* High Current Capability
* Low Saturation Vol.
Using novel field stop IGBT technology, onsemi’s new series of
field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
Features
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