FGY75N60SMD datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A
* High Input Impedance
* Fast Switching: EOFF = 10 mJ/A
* RoHS Compli.

Application

where low conduction and switching losses are essential. Features
* High Current Capability
* Low Saturation Vol.

Description

Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features
* .

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