FGHL75T65LQDT datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volt.

Application

* Solar Inverter
* UPS, ESS
* PFC, Converters MAXIMUM RATINGS Parameter Collector to Emitter Voltage Gate .

Description

Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. Features
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capab.

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