FGH80N60FD2 igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Fr.
where low conduction and switching losses are essential.
Features
* High Current Capability
* Low Saturation Vol.
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential.
Features
* High Current Capability
*.
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