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FGH80N60FD2 Datasheet, ON Semiconductor

FGH80N60FD2 igbt equivalent, igbt.

FGH80N60FD2 Avg. rating / M : 1.0 rating-11

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FGH80N60FD2 Datasheet

Features and benefits


* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Fr.

Application

where low conduction and switching losses are essential. Features
* High Current Capability
* Low Saturation Vol.

Description

Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential. Features
* High Current Capability
*.

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