FGH80N60FD2 - IGBT

Description

stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential.

Features

High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.8 V (Typ. ) @ IC = 40 A.
High Input Impedance.
Fast Switching.
This Device is Pb.
Free and is RoHS Compliant.

ON Semiconductor

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Datasheet Details

Part number	FGH80N60FD2
Manufacturer	ON Semiconductor
File Size	402.71 KB
Description	IGBT
Datasheet	FGH80N60FD2 Datasheet
Additional preview pages of the FGH80N60FD2 datasheet.

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IGBT - Field Stop 600 V, 40 A FGH80N60FD2 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A • High Input Impedance • Fast Switching • This Device is Pb−Free and is RoHS Compliant Applications • Induction Heating, PFC www.onsemi.com VCES 600 V IC 40 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH80N60 FD2 © Semiconductor Components Industries, LLC, 2008 February, 2020 − Rev.

Published: Apr 1, 2020 |