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FGH80N60FD - IGBT

Description

field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A.
  • High Input Impedance.
  • Fast Switching.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Other Datasheets by ON Semiconductor

Full PDF Text Transcription

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IGBT - Field Stop 600 V, 80 A FGH80N60FD Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • This Device is Pb−Free and is RoHS Compliant Applications • Induction Heating, PFC, Telecom, ESS www.onsemi.
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