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FGH75T65UPD Datasheet, ON Semiconductor

FGH75T65UPD igbt equivalent, igbt.

FGH75T65UPD Avg. rating / M : 1.0 rating-11

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FGH75T65UPD Datasheet

Features and benefits


* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volt.

Application


* Solar Inverter, UPS, Digital Power Generator www.onsemi.com C G E E C G TO−247−3LD CASE 340CK FGH75T65UPD TO−24.

Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essenti.

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TAGS

FGH75T65UPD
IGBT
FGH75T65UPD-F155
FGH75T65SHD
FGH75T65SHDT
ON Semiconductor

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