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FGH75T65UPD-F155 - IGBT

Download the FGH75T65UPD-F155 datasheet PDF (FGH75T65UPD included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for igbt.

Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera

tor where low conduction and switching losses are essential.

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ. ) @ IC = 75 A.
  • 100% of Parts Tested ILM.
  • High Input Impedance.
  • Tightened Parameter Distribution.
  • Short Circuit Ruggedness > 5 ms @ 25°C.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FGH75T65UPD-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 75 A • 100% of Parts Tested ILM • High Input Impedance • Tightened Parameter Distribution • Short Circuit Ruggedness > 5 ms @ 25°C • These Devices are Pb−Free and are RoHS Compliant Applications • Solar Inverter, UPS, Digital Power Generator www.onsemi.
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