FGH75N60UF igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 75 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Fr.
where low conduction and switching losses are essential.
Features
* High Current Capability
* Low Saturation Vol.
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