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FGH4L50T65MQDC50 - N-Channel IGBT

Features

  • Positive Temperature Coefficient for Easy Parallel Operation.
  • High Current Capability.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Smooth and Optimized Switching.
  • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ. ) @ IC = 50 A.
  • No Reserved Recovery / No Forward Recovery.
  • Tight Parameter Distribution.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 50 A FGH4L50T65MQDC50 Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology in TO−247 4−lead package, FGH4L50T65MQDC50 offers the optimum performance with both low conduction and switching losses for high−efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. Features • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • 100% of the Parts are Tested for ILM (Note 2) • Smooth and Optimized Switching • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.