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FGH4L40T120LQD - IGBT

Features

  • a robust and cost.
  • effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching.

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Full PDF Text Transcription

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IGBT - Ultra Field Stop 1200 V, 40 A, VCE(Sat) = 1.55V, TO247 4L FGH4L40T120LQD This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free−wheeling diode with a low forward voltage.
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